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| IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region (p=750 nm). The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 m. The photodiodes of S8381 series also have a height of 2.5 mm but are arrayed at a spacing of 25 m. The photodiodes are available in 3 different pixel quantities for each series, 128 (S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard window material. Features Applications l High sensitivity in the IR and soft X-ray regions l Wide active area Pixel pitch: 50 m (S8380 series) 25 m (S8381 series) Pixel height: 2.5 mm l High UV sensitivity with good stability l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Lower power consumption: 1 mW Max. l Start pulse and clock pulses are CMOS logic compatible l Multichannel spectrophotometry l Image readout system Figure 1 Equivalent circuit START CLOCK CLOCK st 1 2 DIGITAL SHIFT REGISTER (MOS SHIFT REGISTER) END OF SCAN Figure 2 Active area structure ACTIVE PHOTODIODE ACTIVE VIDEO Vss SATURATION CONTROL GATE SATURATION CONTROL DRAIN DUMMY DIODE 1.0 m 400 m b a DUMMY VIDEO 1.0 m OXIDATION SILICON KMPDC0020EA N TYPE SILICON P TYPE SILICON S8380 SERIES: a=50 m, b=45 m S8381 SERIES: a=25 m, b=20 m KMPDA0125EA s Absolute maximum ratings Parameter Input pulse (1, 2, st) voltage Power consumption *1 Operating temperature *2 Storage temperature *1: V=5.0 V *2: No condensation Symbol V P Topr Tstg Value 15 1 -40 to +65 -40 to +85 Unit V mW C C 2.5 mm 1 NMOS linear image sensor s Shape specifications Parameter Number of pixels Package length Number of pin Window material *3 Weight S8380-128Q S8380-256Q 128 256 31.75 22 Quartz 3.0 S8380-512Q 512 40.6 S8380/S8381 series Unit mm g 3.5 S8381-256Q S8381-512Q S8381-1024Q 256 512 1024 31.75 40.6 22 Quartz 3.0 3.5 *3: Fiber optic plate is available. s Specifications (Ta=25 C) Parameter Symbol Min. S8380 series Typ. Max. 50 2.5 Min. S8381 series Typ. Max. 25 2.5 200 to 1000 0.6 3 750 0.1 10 90 25 0.3 3 Unit m mm nm nm pA pF mlx * s pC % Pixel pitch Pixel height Spectral response range 200 to 1000 (10 % of peak) Peak sensitivity wavelength 750 p Photodiode dark current * 4 ID 0.2 Photodiode capacitance *4 Cph 20 Saturation exposure * 4, *5 Esat 90 Saturation output charge * 4 Qsat 50 P h o to re s p o n s e n o n -u n ifo rm ity * 6 PRNU *4: Vb=2.0 V, V=5.0 V *5: 2856 K, tungsten lamp *6: 50 % of saturation, excluding the start pixel and last pixel s Electrical characteristics (Ta=25 C) P a ra m e te r Clock pulse (1, 2) voltage S ym b o l C ondition High V1, V2 (H) Low V1, V2 (L) High Vs (H) Start pulse (st) voltage Low Vs (L) Video bias voltage *7 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd tr1, tr2 C lo ck p ulse (1, 2) rise / fa ll tim e * 8 tf1, tf2 Clock pulse (1, 2) pulse width tpw1, tpw2 Start pulse (st) rise / fall time trs, tfs Start pulse (st) pulse width tpws Start pulse (st) and clock pulse tov (2) overlap 8 Clock pulse space * X1, X2 Data rate * 9 f Video delay time Clock pulse (1, 2) line capacitance Saturation control gate (Vscg) line capacitance Video line capacitance tvd 50 % o f sa tu ra tio n * 9, * 10 5 V bias Min. 4.5 0 4.5 0 1.5 200 200 200 trf - 20 0.1 S8380 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb 20 20 80 (-128 Q ) 120 (-256 Q) 160 (-512 Q) 21 (-128 Q ) 36 (-256 Q ) 67 (-512 Q ) 12 (-128 Q ) 20 (-256 Q ) 35 (-512 Q ) 7 (-128 Q ) 11 (-256 Q ) 20 (-512 Q ) 2000 Min. 4.5 0 4.5 0 1.5 200 200 200 trf - 20 0.1 S8381 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb 20 20 100 (-256 Q ) 150 (-512 Q ) 200 (-1024 Q) 27 (-256 Q ) 50 (-512 Q ) 100 (-1024 Q) 14 (-256 Q ) 24 (-512 Q ) 45 (-1024 Q ) 10 (-256 Q ) 16 (-512 Q ) 30 (-1024 Q ) 2000 Unit V V V V V V V ns ns ns ns ns ns kHz ns ns ns pF pF pF pF pF pF pF pF pF C Cscg 5 V bias CV 2 V bias *7: V is input pulse voltage (refer to figure 8). *8: trf is the clock pulse rise or fall time. A clock pulse space of "rise time/fall time - 20 " ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns (refer to figure 7). *9: Vb=2.0 V, V=5.0 V *10: Measured with C7883 driver circuit. 2 NMOS linear image sensor Figure 3 Dimensional outlines (unit: mm) S8380-128Q, S8381-256Q ACTIVE AREA 6.4 x 2.5 ACTIVE AREA 12.8 x 2.5 S8380/S8381 series S8380-256Q, S8381-512Q 5.4 0.2 3.2 0.3 6.4 0.3 10.4 5.4 0.2 5.0 0.2 10.4 5.0 0.2 31.75 PHOTOSENSITIVE SURFACE 1.3 0.2 * 31.75 PHOTOSENSITIVE SURFACE 0.51 2.54 0.25 0.51 2.54 0.25 25.4 10.16 25.4 10.16 * Optical distance from the outer surface of the quartz window to the chip surface KMPDA0061EA * Optical distance from the outer surface of the quartz window to the chip surface KMPDA0060EA S8380-512Q, S8381-1024Q Figure 4 Pin connection 2 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 NC NC NC NC NC NC NC NC NC NC END OF SCAN 5.4 0.2 ACTIVE AREA 25.6 x 2.5 12.8 0.3 1 st Vss 10.4 Vscg NC 5.0 0.2 40.6 PHOTOSENSITIVE SURFACE Vscd Vss ACTIVE VIDEO 1.3 0.2 * DUMMY VIDEO Vsub 3.0 Vss, Vsub and NC should be grounded. 0.51 2.54 25.4 10.16 0.25 * Optical distance from the outer surface of the quartz window to the chip surface KMPDA0062EA 1.3 0.2 * KMPDC0056EA 3.0 3.0 3 NMOS linear image sensor s Recommended operating conditions Terminal 1, 2 st Vss Vscg Vscd Input or output Input (CMOS logic compatible) Input (CMOS logic compatible) Input Input S8380/S8381 series Active video Output Dummy video Vsub End of scan NC Output Output (CMOS logic compatible) - Description Pulses for operating the MOS shift register. The video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of 2 pulse. Pulse for starting the MOS shift register operation. The time interval between start pulses is equal to the signal accumulation time. Connected to the anode of each photodiode. This should be grounded. Used for restricting blooming. This should be grounded. Used for restricting blooming. This should be biased at a voltage equal to the video bias voltage. Video output signal. Connects to photodiode cathodes when the address is on. A positive voltage should be applied to the video line in order to use photodiodes with a reverse voltage. When the amplitude of 1 and 2 is 5 V, a video bias voltage of 2 V is recommended. This has the same structure as the active video, but is not connected to photodiodes, so only spike noise is output. This should be biased at a voltage equal to the active video or left as an open-circuit when not needed. Connected to the silicon substrate. This should be grounded. This should be pulled up at 5 V by using a 10 k resistor. This is a negative going pulse that appears synchronously with the 2 timing right after the last photodiode is addressed. Should be grounded. Figure 5 Spectral response (typical example) 0.5 IR HIGH-SENSITIVITY TYPE S8380/S8381 SERIES (Ta=25 C) Figure 6 Output charge vs. exposure 10 2 (Typ. Vb=2 V, V =5 V, light source: 2856 K) PHOTO SENSITIVITY (A/W) 0.4 101 OUTPUT CHARGE (pC) SATURATION CHARGE S8380 SERIES 0.3 10 0 S8381 SERIES 10 -1 0.2 SATURATION EXPOSURE 10 -2 0.1 STANDARD TYPE 0 200 400 600 800 1000 1200 10-3 10-5 10-4 10-3 10-2 10-1 100 WAVELENGTH (nm) KMPDB0161EA EXPOSURE (lx * s) KMPDB0162EB Figure 7 Timing chart for driver circuit st 1 2 V s (H) V s (L) V V V V 1 (H) 1 (L) 2 (H) 2 (L) tpw s tpw 1 Figure 8 Video bias voltage margin 10 tvd ACTIVE VIDEO OUTPUT VIDEO BIAS VOLTAGE (V) tpw 2 8 S BIA X. 6 END OF SCAN D DE EN MM CO RE MA 4 VIDEO BIAS RANGE 2 MIN. tr s st tf s tr 1 tf 1 1 X1 2 t ov tr 2 X2 tf 2 0 4 5 6 7 8 9 10 CLOCK PULSE AMPLITUDE (V) KMPDC0022EA KMPDB0043EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KMPD1045E01 Oct. 2005 DN |
Price & Availability of S8380-512Q
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